P. Kumar, Y.-C. Liao, D. Ralph, and A. Naeemi, “A drift-diffusion based modeling framework for accurate estimation of spin current in spin-orbit torque materials,” IEEE Trans. Electron Devices., IEEE Trans. Electron Devices, vol. 70, no. 2, pp. 789-795, Feb. 2023.
S. Narla, P. Kumar, F. Laguna, D. Reis, X. S. Hu, M. Niemier, and A. Naeemi, “Design of a compact spin-orbit-torque based ternary content addressable memory (TCAM),” IEEE Trans. Electron Devices, vol. 70, no. 2, pp. 506-513, Feb. 2023.
D. E. Shim, V. Huang, X. Chen, S. K. Gupta and A. Naeemi, “A Comprehensive Modeling Platform for Interconnect Technologies,” IEEE Trans. Electron Devices, vol. 70, no. 5, pp. 2594-2599, May 2023.
L. Shang, A. Naeemi and C. Pan, “Towards Area Efficient Logic Circuit: Exploring Potential of Reconfigurable Gate by Generic Exact Synthesis,” IEEE Open Journal of the Computer Society, vol. 4, pp. 50-61, March 2023.
M. Adnaan, S.-C. Chang, H. Li, D. Nikonov, I. A Young, A. Naeemi, “A compact model for ferroelectric capacitors based on multidomain phase-field framework,” IEEE Trans. Electron Devices, available as early access.
Y.-C. Liao, C.-S. Hsu, S.-C. Chang, H. Li, D. E. Nikonov, I. A. Young, and A. Naeemi “Evaluating the performances of the ultra-low power magnetoelectric random-access memory with a physics-based compact model of the antiferromagnet/ferromagnet bilayer,” IEEE Trans. Electron devices, vol. 69, no. 5, pp. 2331-2337, May 2022.
H. Li, D. E. Nikonov, C. -C Lin, K. Camsari, Y. -C. Liao, C. -S Hsu, A. Naeemi, and I. A. Young, “Physics-based models for magneto-electric spin-Orbit logic circuits,” Accepted for publication in IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), vol. 8, no. 1, pp. 10-18, June 2022.
D. Zhang, M. Bapna, W. Jiang, D. Sousa, Y.-C. Liao, Z. Zhao, Y. Lv, P. Sahu, D. Lyu, A. Naeemi, T. Low, S. A. Majetich, and J.-P. Wang, “Bipolar electric-field switching of perpendicular magnetic tunnel junctions through voltage-controlled exchange coupling,” Nano Letters, vol. 22, no. 2, pp. 622-629, 2022.
S. L. Noor, P. Van Dorpe, D. Lin, F. Catthoor, and A. Naeemi, “Numerical analysis of plasmonic MIM and MSM waveguide couplers for integrated plasmonic circuits,” IEEE Photonics Journal, vol. 14, no. 4, pp. 1-10, Aug. 2022.
S. Narla, P. Kumar, F. Laguna, D. Reis, X. S. Hu, M. Niemier, and A. Naeemi, “Design of a compact spin-orbit-torque based ternary content addressable memory (TCAM),” IEEE Trans. Electron Devices, Letter of acceptance received on Dec. 19, 2022.
S. Narla, P. Kumar, F. Laguna, D. Reis, X. S. Hu, M. Niemier, and A. Naeemi, “Modeling and design for magnetoelectric ternary content addressable memory (TCAM),” IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), vol. 8, no. 1, pp. 44-52, June 2022.
P. Kumar and A. Naeemi, “Benchmarking of spin-orbit torque vs spin-transfer torque devices,” Applied Physics Letters, vol. 121, no. 11, pp. 112406, 2022 (Invited Paper).
Z. C. Seskir, P. Migdał, C. Weidner, A. Anupam, N. Case, N. Davis, C. Decaroli, İ. Ercan, C. Foti, P. Gora, K. Jankiewicz, B. R. La Cour, J. Y. Malo, S. Maniscalco, A. Naeemi, L. Nita, N. Parvin, F. Scafirimuto, J. F. Sherson, E. Surer, J. R. Wootton, L. Yeh, O. Zabello, M. Chiofalo, “Quantum games and interactive tools for quantum technologies outreach and education,” SPIE Opt. Eng. 61(8) 081809 (1 July 2022).
P. Kumar and A. Naeemi, “High density spin-orbit torque magnetic random access memory with voltage-controlled magnetic anisotropy/spin-transfer torque assist,” IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), vol. 8, no. 2, pp. 185-193, Dec. 2022.
T. K. Ekanayaka, G. Hao, A. Mosey, A. S Dale, X. Jiang, A. J. Yost, K. R Sapkota, G. T. Wang, J. Zhang, A. Marshall, R. Cheng, A. Naeemi, X. Xu, P. A. Dowben, “Nonvolatile voltage controlled molecular spin-state switching for memory applications,” Magnetochemistry 2021, 7, 37.
A. Barman, G. Gubbiotti, S. Ladak, A. O. Adeyeye, M. Krawczyk, J. Gräfe, C. Adelmann, S. Cotofana, A. Naeemi, V. I. Vasyuchka, B. Hillebrands, S.A. Nikitov, H. Yu, D. Grundler, A. Sadovnikov, A. A Grachev, S.E. Sheshukova, J.-Y. Duquesne, M. Marangolo, C. Gyorgy, W. Porod, V.E. Demidov, S. Urazhdin, S. Demokritov, E. Albisetti, D. Petti, R. Bertacco, H. Schulteiss, V. V Kruglyak, V. D Poimanov, A. K. Sahoo, J. Sinha, H. Yang, M. Muenzenberg, T. Moriyama, S. Mizukami, P. Landeros, R. A. Gallardo, G. Carlotti, J.-V. Kim, R. L. Stamps, R. E. Camley, B. Rana, Y. Otani, W. Yu, T. Yu, G. Bauer, C. H Back, G. S Uhrig, O. V Dobrovolskiy, S. Dijken, B. Budinska, H. Qin, A. Chumak, A. Khitun, D. E. Nikonov, I. A. Young, B. Zingsem, M. Winklhofer, “The 2021 magnonics roadmap,” J. Phys.: Condens. Matter 33 413001.
C.-S. Hsu, S.-C. Chang, D. E. Nikonov, I. A. Young, and A. Naeemi, “Hysteresis-free negative capacitance effect in metal-ferroelectric-insulator Metal capacitors with dielectric leakage and interfacial trapped charges,” Phys. Rev. Applied, 15 (3), 034048 (2021).
A. Anupam, R. Gupta, S. Gupta, Z. Li, N. Hong, A. Naeemi, N. JafariNaimi, “Design challenges for science games,” International Journal of Designs for Learning, vol. 11 (1), pp. 1-20, 2020.
R. Nashed, C. Pan, X. Wu, I. Asselberghs, Z.Tokei, F. Catthoor, A. Naeemi, “Accurate determination of interlayer resistivity of two-dimensional layered systems: Graphene case study,” IEEE Trans. Electron Devices, vol. 67, pp. 627-632, Feb. 2020.
L. L. Tao, A. Naeemi, and E. Y. Tsymbal, “Valley-spinlogic gates,” Phys. Rev. Applied, 13, 054043 (2020), Featured as an “Editors’ Suggestion”.
C. S. Hsu, S. C. Chang, D. E. Nikonov, I. A. Young, and A. Naeemi, “A theoretical study of multidomain ferroelectric switching dynamics with a physics-based SPICE circuit model for phase-field simulations,” IEEE Trans. Electron Devices, vol. 67, pp. 2952-2959, May 2020.
S. L. Noor, K. Dens, P. Reynaert, F. Catthoor, D. Lin, P. Van Dorpe, and A Naeemi, “Modeling and optimization of plasmonic detectors for beyond-CMOS plasmonic majority logic gates,” IEEE J. Lightwave Tech., vol. 38, pp. 5092-5099, May 2020.
Y. -C. Liao, C. Pan and A. Naeemi, “Benchmarking and Optimization of Spintronic Memory Arrays,” IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), vol. 6, pp. 9-17, June 2020.
X. Li, S.-J Lin, M. DC, Y.-C. Liao, C. Yao, A. Naeemi, W. Tsai, S. X. Wang, “Materials requirements of high-speed and low-power spin-orbit-torque magnetic random-access memory,” IEEE J. Electron Device Society, vol. 8, pp. 674-680, July 2020.
Y. -C Liao, D. E. Nikonov, S. Dutta, S.-C. Chang, S. Manipatruni, I. A. Young, A. Naeemi, “Simulation of the magnetization dynamics of a single-domain BiFeO₃ nanoislands,” IEEE Trans. Magnetics, vol. 56, pp. 1-9, July 2020 (Featured on the cover page).
Y. -C Liao, D. E. Nikonov, S. Dutta, S.-C. Chang, C. H. Hsu, I. A. Young, A. Naeemi, “Understanding the switching mechanisms of the antiferromagnet/ferromagnet heterojunction,” Nano Letters, vol. 20, pp. 7919-7926, Oct. 2020.
Q. Lou, C. Pan, J. Mcguinness, A. Horvath, A. Naeemi, M. Neimier, and S. Hu, “A mixed signal architecture for convolutional neural networks,” ACM Journal on Emerging Technologies in Computing Systems, vol. 15, pp. 1-26, June 2019.
C. Pan, Q. Lou, M. Niemier, S. Hu, A. Naeemi, “Energy-efficient convolutional neural network based on cellular neural network using beyond-CMOS technologies,” IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), vol. 5, pp. 85-93, Dec. 2019.
A. Anupam, R. Gupta, A. Naeemi and N. JafariNaimi, “Particle in a box: An experiential environment for learning introductory quantum mechanics,” IEEE Trans. Education, vol. 61, pp. 1-9, Jan. 2018.
R. M. Iraei, N. Kani, S. Dutta, D. E. Nikonov, S. Manipatruni, I.A. Young, J. T. Heron and A. Naeemi, “Clocked magnetostriction-assisted spintronic device design and simulation,” IEEE Trans. Electron Devices, vol. 65, pp. 2040-2046, May 2018.
C. S. Hsu, C. Pan and A. Naeemi “Performance analysis and enhancement of negative capacitance logic devices based on internally resistive ferroelectrics,” IEEE Electron Device Letters, vol. 39, pp. 765-768, May 2018.
N. Kani, S. Rakheja, and A. Naeemi, “Analytic modeling of dipolar field requirements for robust coupling in a non-identical biaxial two-magnet system,” Journal of Applied Physics 124 (2), 023901 (Featured on the cover page).
C. Pan and A. Naeemi, “Transient performance analysis and optimization of crossbar memory arrays using NbO2-based threshold switching selectors,” IEEE Transactions on Electron Devices, vol. 65, pp. 3214-3220, Aug. 2018.
R. Nashed, C. Pan, K. Brenner, and A. Naeemi, “Field emission from graphene sheets and its application in floating gate memories,” Semiconductor Science and Technology, 33 (12), 125003.
C. Pan and A. Naeemi, “Complementary logic implementation for antiferromagnet field-effect transistors,” IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), vol. 4, pp. 69-75, Dec. 2018.
O. Zografos, S. Dutta, M. Manfrini, A. Vaysset, B. Sorée, A. Naeemi, P. Raghavan, R. Lauwereins and I.P. Radu, “Non-volatile spin wave majority gate at the nanoscale”, AIP Advances 7, 056020 (2017).
N. Kani, S. Rakheja, A. Naeemi, “Non-monotonic probability of thermal reversal in low-anisotropy thin-film in-plane nanomagnets,” AIP Advances 7, 056006 (2017).
C. Pan and A. Naeemi, “Non-volatile spintronic memory array performance benchmarking based on three-terminal memory cell,” IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (JxCDC), vol. 3, pp. 10-17, February, 2017.
S. -C. Chang, A. Naeemi, D. E. Nikonov, A. Gruverman, “Theoretical approach to electroresistance in ferroelectric tunnel junctions," Phys. Rev. Applied, 7, 024005 (2017).
D. Prasad, C. Pan, A. Naeemi, “Modeling interconnect variability at advanced technology nodes and potential solutions,” IEEE Trans. Electron Devices, vol. 64, pp. 1246-1253, March 2017.
N. Kani, J. Heron, and A. Naeemi, "Strain-mediated magnetization reversal through Spin-transfer torque", IEEE Trans. Magnetics, vol. 53, 4300808, May 2017.
S. Dutta, D. Nikonov, S. Manipatruni, I.A. Young and A. Naeemi, “Overcoming Thermal Noise in Non-Volatile Spin Wave Logic.” Scientific Reports 7 (2017): 1915.
S. Dutta, O. Zografos, S. Gurunarayanan, I. Radu, B. Soree, F. Catthoor, and A. Naeemi, “Proposal for nanoscale cascaded plasmonic majority gates for non-Boolean computation,” Nature Scientific Reports, 7, 17866 (2017).
N. Kani and A. Naeemi, "Coupling reliability models of two-magnet systems for slow-reversal cases,” Journal of Applied Physics 122.22 (2017): 223902.
S. Dutta, D. Nikonov, S. Manipatruni, I.A. Young and A. Naeemi, “Overcoming Thermal Noise in Non-Volatile Spin Wave Logic.” Scientific Reports 7 (2017): 1915.
C. Pan and A. Naeemi, “An expanded benchmarking of beyond-CMOS devices based on boolean and neuromorphic representative circuits,” IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), vol. 3, pp. 101-110, Dec. 2017.
C. Pan and A. Naeemi, “Non-Boolean Computing Benchmarking for beyond-CMOS Devices based on Cellular Neural Network,” IEEE Journal of Exploratory Solid-State Computational Devices and Circuits (JxCDC), vol. 2, pp. 36-43, December, 2016.
R. Nashed, C. Pan, K. Brenner, and A. Naeemi, "Ultra-High Mobility in Dielectrically Pinned CVD Graphene". IEEE Journal of the Electron Devices Society, 4(6), pp. 466-472, Nov 2016.
N. Kani, S. Rakheja, and A. Naeemi. "A Probability-Density Function Approach to Capture the Stochastic Dynamics of the Nanomagnet and Impact on Circuit Performance." IEEE Trans. Electron Devices, vol.10, pp. 4119-4126, Oct. 2016.
C. Pan and A. Naeemi, “A Proposal for Energy-Efficient Cellular Neural Network Based on Spintronic Devices,” IEEE Trans. Nanotechnology (TNANO), vol. 15, pp. 820-827, August 2016.
V. Kumar, H. Oh, X. Zhang, L. Zheng, M.S. Bakir, A. Naeemi, “Impact of on-chip interconnect on the performance of 3D integrated circuits with through Silicon Vias: Part I,” IEEE Trans. Electron Devices, vol. 63, pp. 2503 – 2509, May 2016.
X. Zhang, V. Kumar, H. Oh, L. Zheng, G.S. May, A. Naeemi, M. Bakir, “Impact of on-chip interconnect on the performance of 3D integrated circuits with through silicon vias: Part II,” IEEE Trans. Electron Devices, vol. 63, pp. 2510 – 2516, May 2016.
H. Aghasi, R. M. Iraei, A. Naeemi, and E. Afshari, “Smart detector cell: A scalable all-spin circuit for low power non-Boolean pattern recognition,” IEEE Trans. on Nanotechnology, vol. 15, pp. 356-366, May 2016 (Featured on the cover page).
C. Pan and A. Naeemi, “Interconnect design and benchmarking for charge-based beyond-CMOS device proposals,” IEEE Electron Device Letters, vol. 37, pp. 508-511, April 2016.
N. Kani, S. Chang, S. Dutta, and A. Naeemi, “A model study of an error-free magnetization reversal through dipolar coupling in a two-magnet system,” IEEE Trans. Magnetics, vol.52, no.2, pp.1-12, Feb. 2016 (Featured on the cover page).
S. -C. Chang, N. Kani, S. Manipatruni, D. E. Nikonov, I. A. Young, and A. Naeemi, “Scaling limits on all-spin logic,” IEEE Trans. on Magnetics, vol. 52, no. 7, 3400404, 2016.
S. Dutta, D. E. Nikonov, S. Manipatruni, I. A. Young, A Naeemi, "Phase-dependent deterministic switching of magnetoelectric spin wave detector in the presence of thermal noise via compensation of demagnetization", Applied Physics Letters 107.19 (2015): 192404.
S. Chang, S. Dutta, S. Manipatruni, D. E. Nikonov, I. A. Young, A. Naeemi, A., "Interconnects for All-Spin Logic Using Automotion of Domain Walls," in Exploratory Solid-State Computational Devices and Circuits, IEEE Journal on , vol.1, no., pp.49-57, Dec. 2015.
D. Prasad, A. Ceyhan, C. Pan, and A. Naeemi, “Adapting interconnect technology to multigate transistors for optimum performance,” IEEE Trans. Electron Devices, vol.62, no.12, pp. 3938-3944, 2015.
S. Dutta, D. E. Nikonov, S. Manipatruni, I. A. Young, A Naeemi, "Compact Physical Model for Crosstalk in Spin-Wave Interconnects," in Electron Devices, IEEE Transactions on , vol.62, no.11, pp.3863-3869, Nov. 2015.
S. Dutta, S. -C. Chang, N. Kani, D. E. Nikonov, S. Manipatruni, I. A. Young, and A. Naeemi, “Non-volatile Clocked Spin Wave Interconnect for Beyond-CMOS Nanomagnet Pipelines”, Nature Scientific Reports, 5, 2015.
C. Pan, P. Raghavan, A. Ceyhan, F. Catthoor, Z. Tokei, and A. Naeemi, “Technology/circuit/system co-optimization and benchmarking for multilayer graphene interconnects at sub-10nm technology Nodes,” IEEE Trans. Electron Devices, vol. 62, pp. 2071-2077, May 2015.
C. Pan and A. Naeemi, “A paradigm shift in local interconnect technology design in the era of nanoscale multi-gate and gate-all-around devices,” IEEE Electron Dev. Lett., vol. 36, pp. 274-276, March 2015.
C. Pan and A. Naeemi, “A fast system-level design methodology for heterogeneous multi-core processors using emerging technologies,” to be published in IEEE Journal on Emerging and Selected Topics in Circuits and Systems, March, 2015.
A.Ceyhan, M. Jung, S. Panth, S.K. Lim and A. Naeemi “Evaluating Chip-level Impact of Cu. low-k Performance Degradation on Circuit Performance at Future Technology Nodes,” IEEE Trans. Electron Devices, vol. PP, no.99, pp.1, Feb. 2015.
C. Pan, R. Baert, I. Ciofi, Z. Tokei, and A. Naeemi, “System-level variation analysis for interconnection networks at sub-10nm technology nodes,” IEEE Trans. Electron Devices, submitted, Jan. 2015.
S. Dutta, D. E. Nikonov, S. Manipatruni, I. A. Young, and A. Naeemi, “ SPICE circuit modeling of PMA spin wave bus excited using magnetoelectric effect,” IEEE Trans. Magnetics, vol.50, no.9, pp.1,11, Sep. 2014.
S. -C. Chang, S. Manipatruni, D. E. Nikonov, I. A. Young, and A. Naeemi, “Design and Analysis of Si Interconnects for All-spin Logic,” IEEE Trans. Magnetics, Sep. 2014.
S. -C. Chang, R. Mousavi, S. Manipatruni, D. E. Nikonov, I. A. Young, and A. Naeemi, ”Design and Analysis of Copper and Aluminum Interconnects for All-spin Logic,” IEEE Trans. Electron Devices, vol. 61, no. 8, pp. 2905–2911, Aug. 2014.
V. Kumar, R. Sharma, E. Uzunlar, Li Zheng, R. Bashirullah, P. Kohl, M. Bakir, and A. Naeemi, “Airgap interconnects: modeling, optimization, and benchmarking for backplane, PCB, and interposer applications,” IEEE Trans. Components, Packaging, and Manufacturing Technology, vol. 4, pp.1335-1346, Aug. 2014.
P. Bonhomme, S. Manipatruni, R. Mousavi, S. Rakheja, S. -C. Chang, D. E. Nikonov, I. A. Young, and A. Naeemi, “Circuit Simulation of Magnetization Dynamics and Spin Transport, IEEE Trans. Electron Devices, vol. 61, pp. 1553-1560, May 2014.
C. Pan and Azad Naeemi, “A Proposal for a novel hybrid interconnect technology for the end of roadmap,” IEEE Electron Device Lett., vol. 35, pp. 250-252, Jan. 2014.
C. Pan and Azad Naeemi, “A paradigm shift in local interconnect technology design in the era of nanoscale multi-gate and gate-all-around devices,” IEEE Electron Device Lett., Jan. 2014.
A. Ceyhan and A. Naeemi, “Cu/Low- k Interconnect Technology Design and Benchmarking for Future Technology Nodes,” IEEE Trans. Electron Devices, vol. 60, pp. 4041-4047, Dec. 2013.
S. Rakheja, S. -C. Chang, and A. Naeemi, “Impact of Dimensional Scaling and Size Effects on Spin Transport in Copper and Aluminum Interconnects, IEEE Trans. Electron Devices, vol. 60, pp. 3013-3939, Nov. 2013.
S. Rakheja and A. Naeemi, “Roles of Doping, Temperature, and Electric Field on Spin Transport Through Semiconducting Channels in Spin Valves,” IEEE Trans. Nanotechnology, vol. 12, pp. 796-805, Sept. 2013.
S. Rakheja, V. Kumar, and A. Naeemi, “Applications of graphene nanoribbons as on-chip interconnects,” Proc. IEEE, vol. 101, pp. 1740 – 1765, July 2013 (Invited).
P. Zheng, S. E. Brian, Y. Yang, R. Murali, A. Naeemi, and J. D. Meindl, “Hydrogenation of Graphene Nanoribbon Edges: Improvement in Carrier Transport,” IEEE Electron Device Lett., vol. 34, pp. 707-709, May 2013.
A. Ceyhan and A. Naeemi, “Cu interconnect limitations and opportunities for SWNT interconnects at the end of the roadmap,” IEEE Trans. Electron Devices, vol. 60, pp. 374–382, Jan. 2013.
V. Kumar, S. Rakheja and A. Naeemi, “Performance and energy-per-bit modeling of multi-layer graphene nanoribbon conductors,” IEEE Trans. Electron Devices, vol. 59, pp. 2753-2761, October 2012.
G. Huang ; M.S. Bakir, A. Naeemi, J. D. Meindl, “Power Delivery for 3-D Chip Stacks: Physical Modeling and Design Implication,” IEEE Trans. Components, Packaging and Manufacturing Technology, vol. 2, pp. 852-859, May 2012.
S. Rakheja and A. Naeemi, “Graphene nanoribbon spin interconnects for non-local spin-torque circuits: Comparison of performance and energy-per-bit with CMOS interconnects,” IEEE Trans. Electron Devices, vol. 59, pp. 51-59, Jan. 2012.
A. Balakrishnan and A. Naeemi, “Interconnect network analysis of many-core chips,” IEEE Trans. Electron Devices, vol. 58, pp. 2831-2837, Sept. 2011.
S. Rakheja and A. Naeemi, "Modeling interconnects for post-CMOS devices and comparison with copper interconnects," IEEE Trans. Electron Devices, vol. 58, pp. 1319-1328, May 2011.
O. Jamal and A. Naeemi, “Ultra-low power single-wall carbon nanotube interconnects for subthreshold circuits,” IEEE Trans. Nanotechnology, vol. 10, pp. 99-101, Jan. 2011.
S. Rakheja and A. Naeemi, “Interconnects for novel state variables: performance modeling and device and circuit implications,” IEEE Trans. Electron Devices, vol. 57, pp. 2711-2718, Oct. 2010.
A. Balakrishnan and A. Naeemi, “Optimal global interconnects for networks-on-chip in many core architectures,” IEEE Electron Device Letters, vol. 31, pp. 290-292, April 2010.
A. Naeemi and J. D. Meindl, "Compact physics-based circuit models for graphene nanoribbon interconnects," IEEE Trans. Electron Devices, vol.56, pp. 1822-1833, Sept. 2009 (Invited).
A. Naeemi and J. D. Meindl, “Performance modeling for single- and multi-wall carbon nanotubes as signal and power interconnects in gigascale systems,” IEEE Trans. Electron Devices, vol. 55, pp. 2574-2582, Oct. 2008.
A. Naeemi and J. D. Meindl, “Electron transport modeling for junctions of zigzag and armchair graphene nanoribbons,” IEEE Electron Device Letters, vol. 29, pp. 497–99, May 2008.
A. Naeemi and J. D. Meindl, “Conductance modeling for graphene nanoribbon (GNR) interconnects,” IEEE Electron Device Letters, vol. 28, pp. 428–431, May 2007.
A. Naeemi and J. D. Meindl, “Physical modeling for temperature coefficient of resistance of carbon nanotubes,” IEEE Electron Device Letters, vol. 28, pp. 135–138, Feb. 2007.
A. Naeemi and J. D. Meindl, “Design and performance modeling for single-wall carbon nanotubes as local, semi-global, and global interconnects in gigascale integrated systems,” IEEE Trans. Electron Devices, vol. 54, pp. 26–37, January 2007.
A. Naeemi and J. D. Meindl, “Compact physical models for multiwall carbon-nanotube interconnects,” IEEE Electron Device Letters, vol. 27, pp. 338–340, May 2006.
A. Naeemi and J. D. Meindl, “Mono-layer metallic nanotube interconnects: promising candidates for short local interconnects,” IEEE Electron Device Letters, vol. 26, pp. 544–546, Aug. 2005.
V. Mulé, R. Villalaz, J. P. Jayachandran, A. Naeemi, P. A. Kohl, T. K. Gaylord, and J. D. Meindl, “Polylithic integration of electrical and optical interconnect technologies for CMOS GSI,” IEEE Trans. Advanced Packaging, vol. 28, pp. 421–433, Aug. 2005.
A. Naeemi and J. D. Meindl, “Impact of electron-phonon scattering on the performance of carbon nanotube interconnects for gigascale integration (GSI),” IEEE Electron Device Letters, vol. 26, pp. 476–478, July 2005.
A. Naeemi, R. Sarvari, and J. D. Meindl, “Performance comparison between carbon nanotube and copper interconnects for gigascale integration (GSI),” IEEE Electron Device Letters, vol. 26, pp. 84–86, Feb. 2005.
A. Naeemi, J. A. Davis, and J. D. Meindl, “Compact physical models for multilevel interconnect crosstalk in gigascale integration (GSI),” IEEE Trans. Electron Devices, vol. 51, pp. 1902–1912, Nov. 2004.
A. Naeemi, J. A. Davis, and J. D. Meindl, “Analysis and optimization of co-planar RLC lines for GSI global interconnection,” IEEE Trans. Electron Devices, vol. 51, pp. 985–994, June 2004.
A. Naeemi, J. Xu, A. V. Mulé, T. K. Gaylord, and J. D. Meindl, “Optical and electrical interconnect partition length based on chip-to-chip bandwidth maximization,” IEEE Photonics Technology Letters, vol. 16, pp. 1221–1223, April 2004.
A. Naeemi, R. Venkatesan, and J. D. Meindl, “Optimal global interconnects for GSI,”IEEE Trans. Electron Devices, vol. 50, pp. 980–987, April 2003.